Current status and future prospects of efforts toward industrialization of quantum technology based on the three government strategies such as "Quantum Technology Innovation Strategy"

NIPPON TELEGRAPH AND TELEPHONE CORPORATION
Science and Core Technology Laboratory Group
Senior Vice President, Basic and Advanced Research Principal

Dr. Tetsuomi Sogawa

He received the B.S., M.S., and Ph.D. degrees in electrical engineering from the University of Tokyo in 1986, 1988, and 1991, respectively. In 1991, He joined NTT Basic Research Laboratories (NTT-BRL). From 1999 to 2000, he worked at Paul Drude Institute in Berlin, Germany, as a guest scientist to investigate acoustic spin manipulation in semiconductor quantum structures. From 2004 to 2006, he worked for the Council for Science and Technology Policy, Cabinet Office, Japan. After serving as the director of NTT-BRL from 2013, he was appointed as the director of NTT Science and Core Technology Laboratory Group in 2018. He has also served as a visiting professor at the Institute of Industrial Science, The University of Tokyo, since 2014. From April 2023, he has served as a program director of "Promoting practical applications of advanced quantum technologies to social issues", Cross-ministerial Strategic Innovation Promotion Program (SIP), Cabinet Office. He is a fellow of the Japan Society of Applied Physics.

In 2020, the "Quantum Technology Innovation Strategy" was formulated, which led to increased government investment and the establishment of quantum technology innovation hubs. In 2021, the industry also established the "Quantum STrategic industry Alliance for Revolution (Q-STAR)" to promote the industrialization of quantum technologies, and has been actively promoting cooperation with foreign quantum-related consortiums. In 2023, the government formulated the "Vision for a Quantum Future Society", and in 2023, the "Strategy for the Creation of Quantum Future Industries". The government has set three goals for 2030: (i) to increase the number of domestic users of quantum technology to 10 million, (ii) to increase the production value of quantum technology to 50 trillion yen, and (iii) to create quantum unicorn venture companies that will pioneer future markets. This presentation will report on these government strategies and related efforts, as well as the activities of the Q-STAR.

QunaSys
CEO

Mr. Tennin Yan

Tennin Yan is QunaSys’ founder and Chief Executive Officer, where he leads the company’s strategy, product strategy and development to make quantum computing technology industrially useful. He has deep expertise in R&D and is specialized in quantum computer algorithms and applications. Tennin founded QunaSys in 2018 together with Prof. Keisuke Fujii with the goal to bring out quantum physics to the front stage and use it to tackle problems that cannot be achieved with conventional technology by actively taking advantage of quantum mechanics.

National Institute for Materials Science (NIMS)
Fellow

Dr. Takashi Taniguchi

2023-Present Executive vice president of NIMS
2021-Present Director of Research Center for Materials Nanoarchitectonics (MANA) NIMS
2018-present: Fellow of NIMS
2001-2017: Group Leader of NIMS
2001: NIRIM merged and reorganized as National Institute for Materials Science (NIMS)
1989: Researcher, National Institute for Research in Inorganic Materials (NIRIM), Science and Technology Agency
1987: Research Associate, Tokyo Institute of Technology
1987: Doctor of Engineering, Tokyo Institute of Technology

Nitrogen-vacancy defects (NV-) in diamond, which have recently attracted attention in quantum sensing research, are required to have various concentrations ranging from less than 1 ppb to more than 10 ppm, depending on the target device. The concentration of nitrogen impurities in high-pressure synthesized diamond can be controlled by adding nitrogen getters such as titanium to the metallic solvent, and the refinement of this process is currently required.
On the other hand, hexagonal boron nitride (hBN) is known as a representative crystal structures of boron nitride (BN). hBN has been found to have attractive potential as a wide bandgap material by obtaining high-quality single crystals and is now attracting attention as a new color center for BN crystals as post NV- diamond. In this paper, our recent attempts to obtaib high-quality diamond single crystals and to control impurities, including the isotopic ratio of boron and nitrogen in BN crystals will be introduced.