Full color micro-LED consisted of GaN microdisks have been grown on LiAlO2 substrate by melecular beam epitaxy. The self-assembled microdisks with diametar about 2 micrometers with high crystal quality can be regarded as a free standing substrate to grow InGaN/GaN quantuem well. By engineering the indium content, the InGaN/GaN quantum wells have been grown on GaN microdisks with desired wavelength to match red-green-blue light which can be used to constitute the pixel for the mciro-LED display This technology has been granted by US Patent (US 8,916,458 B2)(US 9,147,808 B2)(US 9,312,440 B2)(US 8,728,235).
GaN micro LED
2 inches LiAlO2 ingot
Department of Physics, National Sun Yat-sen University